Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells
Identifieur interne : 000314 ( Russie/Analysis ); précédent : 000313; suivant : 000315Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells
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Abstract
The spectral and polarization dependences of intraband light absorption in n- and p-doped structures with InAs/GaAs quantum dots covered by InGaAs layers were studied experimentally and theoretically. The transmittance of p- and s-polarized mid-infrared radiation was studied in a multi-pass sample geometry. Elastic strain, piezoelectric fields and a complex valence band structure were taken into account in calculations of the energy spectrum, the carrier wavefunctions and intraband optical matrix elements. The experimentally determined value of the absorption cross section corresponding to |000>→|001> intraband electron transitions is 4.1 × 10-15 cm2. Light absorption related to intraband hole transitions was found to be significantly smaller. The dispersion of the dot sizes was evaluated using the experimentally determined spectral widths of intraband absorption peaks.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells</title><author><name sortKey="Vorobjev, L E" uniqKey="Vorobjev L">L. E. Vorobjev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Saint Petersburg State Polytechnic University</s1><s2>St. Petersburg 195251</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Saint Petersburg State Polytechnic University</wicri:noRegion></affiliation></author><author><name sortKey="Firsov, D A" uniqKey="Firsov D">D. A. Firsov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Saint Petersburg State Polytechnic University</s1><s2>St. Petersburg 195251</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Saint Petersburg State Polytechnic University</wicri:noRegion></affiliation></author><author><name sortKey="Shalygin, V A" uniqKey="Shalygin V">V. A. Shalygin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Saint Petersburg State Polytechnic University</s1><s2>St. Petersburg 195251</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Saint Petersburg State Polytechnic University</wicri:noRegion></affiliation></author><author><name sortKey="Fedosov, N K" uniqKey="Fedosov N">N. K. Fedosov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Saint Petersburg State Polytechnic University</s1><s2>St. Petersburg 195251</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Saint Petersburg State Polytechnic University</wicri:noRegion></affiliation></author><author><name sortKey="Panevin, V Yu" uniqKey="Panevin V">V. Yu. Panevin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Saint Petersburg State Polytechnic University</s1><s2>St. Petersburg 195251</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Saint Petersburg State Polytechnic University</wicri:noRegion></affiliation></author><author><name sortKey="Andreev, A" uniqKey="Andreev A">A. Andreev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute RAS</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physico-Technical Institute RAS</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, University of Surrey</s1><s3>GBR</s3><sZ>6 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Department of Physics, University of Surrey</wicri:noRegion></affiliation></author><author><name sortKey="Ustinov, V M" uniqKey="Ustinov V">V. M. Ustinov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute RAS</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physico-Technical Institute RAS</wicri:noRegion></affiliation></author><author><name sortKey="Cirlin, G E" uniqKey="Cirlin G">G. E. Cirlin</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute for Analytical Instrumentation RAS</s1><s2>St. Petersburg 198103</s2><s3>RUS</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Institute for Analytical Instrumentation RAS</wicri:noRegion></affiliation></author><author><name sortKey="Egorov, V A" uniqKey="Egorov V">V. A. Egorov</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute for Analytical Instrumentation RAS</s1><s2>St. Petersburg 198103</s2><s3>RUS</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Institute for Analytical Instrumentation RAS</wicri:noRegion></affiliation></author><author><name sortKey="Tonkikh, A A" uniqKey="Tonkikh A">A. A. Tonkikh</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute for Analytical Instrumentation RAS</s1><s2>St. Petersburg 198103</s2><s3>RUS</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Institute for Analytical Instrumentation RAS</wicri:noRegion></affiliation></author><author><name sortKey="Fossard, F" uniqKey="Fossard F">F. Fossard</name><affiliation wicri:level="4"><inist:fA14 i1="05"><s1>Institut d'Electronique Fondamentale, Universite Paris-Sud</s1><s2>91405 Orsay</s2><s3>FRA</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName><orgName type="university">Université Paris-Sud</orgName></affiliation></author><author><name sortKey="Tchernycheva, M" uniqKey="Tchernycheva M">M. Tchernycheva</name><affiliation wicri:level="4"><inist:fA14 i1="05"><s1>Institut d'Electronique Fondamentale, Universite Paris-Sud</s1><s2>91405 Orsay</s2><s3>FRA</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName><orgName type="university">Université Paris-Sud</orgName></affiliation></author><author><name sortKey="Moumanis, Kh" uniqKey="Moumanis K">Kh. Moumanis</name><affiliation wicri:level="4"><inist:fA14 i1="05"><s1>Institut d'Electronique Fondamentale, Universite Paris-Sud</s1><s2>91405 Orsay</s2><s3>FRA</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName><orgName type="university">Université Paris-Sud</orgName></affiliation></author><author><name sortKey="Julien, F H" uniqKey="Julien F">F. H. Julien</name><affiliation wicri:level="4"><inist:fA14 i1="05"><s1>Institut d'Electronique Fondamentale, Universite Paris-Sud</s1><s2>91405 Orsay</s2><s3>FRA</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName><orgName type="university">Université Paris-Sud</orgName></affiliation></author><author><name sortKey="Hanna, S" uniqKey="Hanna S">S. Hanna</name><affiliation wicri:level="3"><inist:fA14 i1="06"><s1>Physikalisches Institut, Universität Bayreuth</s1><s2>Bayreuth 95447</s2><s3>DEU</s3><sZ>15 aut.</sZ><sZ>16 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Franconie</region><settlement type="city">Bayreuth</settlement></placeName></affiliation></author><author><name sortKey="Seilmeier, A" uniqKey="Seilmeier A">A. Seilmeier</name><affiliation wicri:level="3"><inist:fA14 i1="06"><s1>Physikalisches Institut, Universität Bayreuth</s1><s2>Bayreuth 95447</s2><s3>DEU</s3><sZ>15 aut.</sZ><sZ>16 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Franconie</region><settlement type="city">Bayreuth</settlement></placeName></affiliation></author><author><name sortKey="Sigg, H" uniqKey="Sigg H">H. Sigg</name><affiliation wicri:level="1"><inist:fA14 i1="07"><s1>Paul Scherrer Institute</s1><s2>5232 Villigen</s2><s3>CHE</s3><sZ>17 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>Paul Scherrer Institute</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0419724</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 06-0419724 INIST</idno><idno type="RBID">Pascal:06-0419724</idno><idno type="wicri:Area/Main/Corpus">008972</idno><idno type="wicri:Area/Main/Repository">008955</idno><idno type="wicri:Area/Russie/Extraction">000314</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term><term>Elastic deformation</term><term>Gallium arsenides</term><term>Indium arsenides</term><term>Infrared spectra</term><term>Intraband transitions</term><term>Matrix elements</term><term>Mid infrared radiation</term><term>Polarized radiation</term><term>Positron annihilation</term><term>Quantum dots</term><term>Quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Transition intrabande</term><term>Spectre IR</term><term>Elément matriciel</term><term>Coefficient absorption</term><term>Rayonnement polarisé</term><term>Rayonnement IR moyen</term><term>Annihilation positon</term><term>Déformation élastique</term><term>Indium arséniure</term><term>Gallium arséniure</term><term>Point quantique</term><term>Puits quantique</term><term>InAs</term><term>GaAs</term><term>InGaAs</term><term>7867D</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The spectral and polarization dependences of intraband light absorption in n- and p-doped structures with InAs/GaAs quantum dots covered by InGaAs layers were studied experimentally and theoretically. The transmittance of p- and s-polarized mid-infrared radiation was studied in a multi-pass sample geometry. Elastic strain, piezoelectric fields and a complex valence band structure were taken into account in calculations of the energy spectrum, the carrier wavefunctions and intraband optical matrix elements. The experimentally determined value of the absorption cross section corresponding to |000>→|001> intraband electron transitions is 4.1 × 10<sup>-15</sup> cm<sup>2</sup>. Light absorption related to intraband hole transitions was found to be significantly smaller. The dispersion of the dot sizes was evaluated using the experimentally determined spectral widths of intraband absorption peaks.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>21</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>VOROBJEV (L. E.)</s1></fA11><fA11 i1="02" i2="1"><s1>FIRSOV (D. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>SHALYGIN (V. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>FEDOSOV (N. K.)</s1></fA11><fA11 i1="05" i2="1"><s1>PANEVIN (V. Yu.)</s1></fA11><fA11 i1="06" i2="1"><s1>ANDREEV (A.)</s1></fA11><fA11 i1="07" i2="1"><s1>USTINOV (V. M.)</s1></fA11><fA11 i1="08" i2="1"><s1>CIRLIN (G. E.)</s1></fA11><fA11 i1="09" i2="1"><s1>EGOROV (V. A.)</s1></fA11><fA11 i1="10" i2="1"><s1>TONKIKH (A. A.)</s1></fA11><fA11 i1="11" i2="1"><s1>FOSSARD (F.)</s1></fA11><fA11 i1="12" i2="1"><s1>TCHERNYCHEVA (M.)</s1></fA11><fA11 i1="13" i2="1"><s1>MOUMANIS (Kh.)</s1></fA11><fA11 i1="14" i2="1"><s1>JULIEN (F. H.)</s1></fA11><fA11 i1="15" i2="1"><s1>HANNA (S.)</s1></fA11><fA11 i1="16" i2="1"><s1>SEILMEIER (A.)</s1></fA11><fA11 i1="17" i2="1"><s1>SIGG (H.)</s1></fA11><fA14 i1="01"><s1>Saint Petersburg State Polytechnic University</s1><s2>St. Petersburg 195251</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Ioffe Physico-Technical Institute RAS</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, University of Surrey</s1><s3>GBR</s3><sZ>6 aut.</sZ></fA14><fA14 i1="04"><s1>Institute for Analytical Instrumentation RAS</s1><s2>St. Petersburg 198103</s2><s3>RUS</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="05"><s1>Institut d'Electronique Fondamentale, Universite Paris-Sud</s1><s2>91405 Orsay</s2><s3>FRA</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></fA14><fA14 i1="06"><s1>Physikalisches Institut, Universität Bayreuth</s1><s2>Bayreuth 95447</s2><s3>DEU</s3><sZ>15 aut.</sZ><sZ>16 aut.</sZ></fA14><fA14 i1="07"><s1>Paul Scherrer Institute</s1><s2>5232 Villigen</s2><s3>CHE</s3><sZ>17 aut.</sZ></fA14><fA20><s1>1341-1347</s1></fA20><fA21><s1>2006</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000133365580220</s5></fA43><fA44><s0>0000</s0><s1>© 2006 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>25 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>06-0419724</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The spectral and polarization dependences of intraband light absorption in n- and p-doped structures with InAs/GaAs quantum dots covered by InGaAs layers were studied experimentally and theoretically. The transmittance of p- and s-polarized mid-infrared radiation was studied in a multi-pass sample geometry. Elastic strain, piezoelectric fields and a complex valence band structure were taken into account in calculations of the energy spectrum, the carrier wavefunctions and intraband optical matrix elements. The experimentally determined value of the absorption cross section corresponding to |000>→|001> intraband electron transitions is 4.1 × 10<sup>-15</sup> cm<sup>2</sup>. Light absorption related to intraband hole transitions was found to be significantly smaller. The dispersion of the dot sizes was evaluated using the experimentally determined spectral widths of intraband absorption peaks.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H67D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Transition intrabande</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Intraband transitions</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Spectre IR</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Infrared spectra</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Elément matriciel</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Matrix elements</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Coefficient absorption</s0><s5>07</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Absorption coefficients</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Rayonnement polarisé</s0><s5>08</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Polarized radiation</s0><s5>08</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Radiación polarizada</s0><s5>08</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Rayonnement IR moyen</s0><s5>09</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Mid infrared radiation</s0><s5>09</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Radiación infrarroja media</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Annihilation positon</s0><s5>10</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Positron annihilation</s0><s5>10</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Déformation élastique</s0><s5>12</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Elastic deformation</s0><s5>12</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Point quantique</s0><s5>17</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Quantum dots</s0><s5>17</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Puits quantique</s0><s5>18</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Quantum wells</s0><s5>18</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>InGaAs</s0><s4>INC</s4><s5>54</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>7867D</s0><s4>INC</s4><s5>60</s5></fC03><fN21><s1>282</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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